1N8030-GA
- Part Number:
- 1N8030-GA
- Manufacturer:
- GeneSiC Semiconductor
- Description:
- DIODE SIL CARB 650V 750MA TO257
- Number of stock:
- 4965 pcs
- Lead Free Status / RoHS Status:
- RoHS non-compliant
- Data sheet:
- 1N8030-GA.pdf
Introduction
We can supply 1N8030-GA, use the request quote form to request 1N8030-GA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 1N8030-GA.The price and lead time for 1N8030-GA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 1N8030-GA.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 1.39 V @ 750 mA |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Technology: | SiC (Silicon Carbide) Schottky |
| Supplier Device Package: | TO-257 |
| Speed: | No Recovery Time > 500mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 0 ns |
| Package / Case: | TO-257-3 |
| Package: | Tube |
| Operating Temperature - Junction: | -55°C ~ 250°C |
| Mounting Type: | Through Hole |
| Current - Reverse Leakage @ Vr: | 5 µA @ 650 V |
| Current - Average Rectified (Io): | 750mA |
| Capacitance @ Vr, F: | 76pF @ 1V, 1MHz |
| Base Product Number: | 1N8030 |
| Email: | sales@hkexcellent.com |
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