IPB80N06S2L06ATMA2
- Part Number:
- IPB80N06S2L06ATMA2
- Manufacturer:
- Infineon Technologies
- Description:
- MOSFET N-CH 55V 80A TO263-3
- Number of stock:
- 32702 pcs
- Lead Free Status / RoHS Status:
- ROHS3 Compliant
Introduction
We can supply IPB80N06S2L06ATMA2, use the request quote form to request IPB80N06S2L06ATMA2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB80N06S2L06ATMA2.The price and lead time for IPB80N06S2L06ATMA2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPB80N06S2L06ATMA2.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 180µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO263-3-2 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 6mOhm @ 69A, 10V |
| Power Dissipation (Max): | 250W (Tc) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package: | Tape & Reel (TR) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 3800 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs: | 150 nC @ 10 V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Base Product Number: | IPB80N |
| Email: | sales@hkexcellent.com |
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