SI1922EDH-T1-GE3
- Part Number:
- SI1922EDH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET 2N-CH 20V 1.3A SOT-363
- Number of stock:
- 241588 pcs
- Lead Free Status / RoHS Status:
- ROHS3 Compliant
- Data sheet:
- 1.SI1922EDH-T1-GE3.pdf2.SI1922EDH-T1-GE3.pdf
Introduction
We can supply SI1922EDH-T1-GE3, use the request quote form to request SI1922EDH-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1922EDH-T1-GE3.The price and lead time for SI1922EDH-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1922EDH-T1-GE3.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SC-70-6 |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 198mOhm @ 1A, 4.5V |
| Power - Max: | 1.25W |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Package: | Tape & Reel (TR) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 8V |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 1.3A |
| Configuration: | 2 N-Channel (Dual) |
| Base Product Number: | SI1922 |
| Email: | sales@hkexcellent.com |
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