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SI4160DY-T1-GE3
SI4160DY-T1-GE3
Part Number:
SI4160DY-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 25.4A 8SO
Number of stock:
68966 pcs
Lead Free Status / RoHS Status:
ROHS3 Compliant
Data sheet:
1.SI4160DY-T1-GE3.pdf2.SI4160DY-T1-GE3.pdf3.SI4160DY-T1-GE3.pdf

Introduction

We can supply SI4160DY-T1-GE3, use the request quote form to request SI4160DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4160DY-T1-GE3.The price and lead time for SI4160DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4160DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifications

Vgs(th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:4.9mOhm @ 15A, 10V
Power Dissipation (Max):2.5W (Ta), 5.7W (Tc)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25.4A (Tc)
Base Product Number:SI4160
Email:sales@hkexcellent.com

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