SI4446DY-T1-GE3
- Part Number:
- SI4446DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET N-CH 40V 3.9A 8SO
- Number of stock:
- 4552 pcs
- Lead Free Status / RoHS Status:
- ROHS3 Compliant
- Data sheet:
- SI4446DY-T1-GE3.pdf
Introduction
We can supply SI4446DY-T1-GE3, use the request quote form to request SI4446DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4446DY-T1-GE3.The price and lead time for SI4446DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4446DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
|---|---|
| Vgs (Max): | ±12V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SOIC |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 40mOhm @ 5.2A, 10V |
| Power Dissipation (Max): | 1.1W (Ta) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Package: | Tape & Reel (TR) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 4.5 V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
| Base Product Number: | SI4446 |
| Email: | sales@hkexcellent.com |
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