
SQ4425EY-T1_GE3
- Part Number:
- SQ4425EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET P-CHANNEL 30V 18A 8SOIC
- Number of stock:
- 38037 pcs
- Data sheet:
- SQ4425EY-T1_GE3.pdf
Introduction
We can supply SQ4425EY-T1_GE3, use the request quote form to request SQ4425EY-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ4425EY-T1_GE3.The price and lead time for SQ4425EY-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ4425EY-T1_GE3.We look forward to working with you to establish long-term relations of cooperation
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
---|---|
Vgs (Max): | ±20V |
Technology: | MOSFET (Metal Oxide) |
Supplier Device Package: | 8-SOIC |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 13A, 10V |
Power Dissipation (Max): | 6.8W (Tc) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Package: | Tape & Reel (TR) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds: | 3630 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 4.5 V |
FET Type: | P-Channel |
FET Feature: | - |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Base Product Number: | SQ4425 |
Email: | sales@hkexcellent.com |
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