SQJB40EP-T1_GE3
- Part Number:
- SQJB40EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET 2 N-CH 40V POWERPAK SO8
- Number of stock:
- 56839 pcs
- Lead Free Status / RoHS Status:
- ROHS3 Compliant
- Data sheet:
- SQJB40EP-T1_GE3.pdf
Introduction
We can supply SQJB40EP-T1_GE3, use the request quote form to request SQJB40EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJB40EP-T1_GE3.The price and lead time for SQJB40EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJB40EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8mOhm @ 8A, 10V |
| Power - Max: | 34W |
| Package / Case: | PowerPAK® SO-8 Dual |
| Package: | Tape & Reel (TR) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| FET Feature: | - |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Configuration: | 2 N-Channel (Dual) |
| Base Product Number: | SQJB40 |
| Email: | sales@hkexcellent.com |
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