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EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Part Number	Description	View
EPC2001	GANFET N-CH 100V 25A DIE OUTLINE	Inquiry
EPC8005ENGR	TRANS GAN 65V 2.9A BUMPED DIE	Inquiry
EPC2016C	GANFET N-CH 100V 18A DIE	Inquiry
EPC2019	GANFET N-CH 200V 8.5A DIE	Inquiry
EPC2104ENG	TRANS GAN 2N-CH 100V BUMPED DIE	Inquiry
EPC8008ENGR	TRANS GAN 40V 2.7A BUMPED DIE	Inquiry
EPC2100ENG	TRANS GAN 2N-CH 30V BUMPED DIE	Inquiry
EPC2034ENGR	TRANS GAN 200V 31A BUMPED DIE	Inquiry
EPC2100ENGRT	GANFET 2 N-CH 30V 9.5A/38A DIE	Inquiry
EPC2029ENGRT	TRANS GAN 80V 31A BUMPED DIE	Inquiry
EPC2031ENGRT	GANFET NCH 60V 31A DIE	Inquiry
EPC2014C	GANFET N-CH 40V 10A DIE OUTLINE	Inquiry
EPC2014	GANFET N-CH 40V 10A DIE OUTLINE	Inquiry
EPC2105ENG	TRANS GAN 2N-CH 80V BUMPED DIE	Inquiry
EPC2031ENGR	TRANS GAN 60V 31A BUMPED DIE	Inquiry
EPC2101	GAN TRANS ASYMMETRICAL HALF BRID	Inquiry
EPC2001C	GANFET N-CH 100V 36A DIE OUTLINE	Inquiry
EPC2010	GANFET N-CH 200V 12A DIE	Inquiry
EPC8002	GANFET N-CH 65V 2A DIE	Inquiry
EPC2110ENGRT	GAN TRANS 2N-CH 120V BUMPED DIE	Inquiry

Records 120

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EPC

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