EPC2101ENG
- Part Number:
- EPC2101ENG
- Manufacturer:
- EPC
- Description:
- TRANS GAN 2N-CH 60V BUMPED DIE
- Number of stock:
- 6738 pcs
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Data sheet:
- EPC2101ENG.pdf
Introduction
We can supply EPC2101ENG, use the request quote form to request EPC2101ENG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2101ENG.The price and lead time for EPC2101ENG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2101ENG.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 2mA |
|---|---|
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 20A, 5V |
| Power - Max: | - |
| Packaging: | Tray |
| Package / Case: | Die |
| Other Names: | 917-EPC2101ENG EPC2101ENGR_H5 EPC2101ENGRH5 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 5V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 9.5A, 38A |
| Email: | sales@hkexcellent.com |
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