EPC2102ENG
- Part Number:
- EPC2102ENG
- Manufacturer:
- EPC
- Description:
- TRANS GAN 2N-CH 60V BUMPED DIE
- Number of stock:
- 8332 pcs
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Data sheet:
- EPC2102ENG.pdf
Introduction
We can supply EPC2102ENG, use the request quote form to request EPC2102ENG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2102ENG.The price and lead time for EPC2102ENG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2102ENG.We look forward to working with you to establish long-term relations of cooperation
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
|---|---|
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 20A, 5V |
| Power - Max: | - |
| Packaging: | Tray |
| Package / Case: | Die |
| Other Names: | 917-EPC2102ENG EPC2102ENGRH6 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 5V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | Mosfet Array 2 N-Channel (Half Bridge) 60V 23A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 23A |
| Email: | sales@hkexcellent.com |
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